On aspects of electron-LO phonon interaction in magnetized semiconductors in the presence of a hybrid pump field

Abstract

Most realistic propagation of an intense hybrid pump wave in a magnetized semiconductor plasma has been considered to study some aspects of electron-LO phonon interactions. Hydrodynamic model for one component plasma along with coupled mode theory has been used to study parametric amplification due to polaron mode. Expressions for parametric gain coefficient arising due to parametric instability and threshold field required to incite parametric amplification has been derived. The compound semiconductors of group III-V and II-VI are unique within the universe of simple octet compounds, enable them to dominate higher performance electronics and optoelectronics. Present study aims to compare materials for which favourable magnitudes of parametric gain and threshold value could be obtained with suitable values of external parameters. Numerical estimations were carried out using the data of two different group compound semiconductors namely ZnSe and GaAs. Both the gain coefficients and threshold pump field are found to be strongly dependent on the carrier concentration of the medium. Resonance between plasma frequency and collective excitation frequency affects the process of amplification in both cases. Higher gain is achieved for GaAs which has smaller coupling coefficient as compared to ZnSe. Hybrid pump propagation is found to strengthen the electron-LO phonon coupling.