Abstract
The present paper is concerned with the analytical study of the modulational amplification of the polaron mode in a magnetized semiconductor. Using the hydrodynamical approach and coupled mode theory we developed analytical expressions for the necessary threshold pump field, third-order susceptibility, and growth rate. Numerical estimations are made for n-InSb crystal at 77 K, irradiated with a 10.6 μm CO2 laser. In a limited range of the parameters (external electric field E0, carrier concentration n0, and cyclotron frequency ωc) a stable behavior of the growth rate and threshold for amplification of the polaron mode are observed. Beyond a certain range of parameters we obtain anomalous behaviour. Heavily doped medium is found to require a lower threshold field. An appropriate magnitude of the transverse magnetic field effectively enhances the growth rate (≈ 10^10 m^(-1)). Hence, the presence of an external magnetic field is favourable for the onset of modulational amplification of the polaron mode in the heavily doped regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
