Abstract
The present paper is concerned with the analytical study of the modulational amplification of the polaron mode in a magnetized semiconductor. Using the hydrodynamical approach and coupled mode theory we developed analytical expressions for the necessary threshold pump field, third-order susceptibility, and growth rate. Numerical estimations are made for n-InSb crystal at 77 K, irradiated with a 10.6 μm CO2 laser. In a limited range of the parameters (external electric field E0, carrier concentration n0, and cyclotron frequency ωc) a stable behavior of the growth rate and threshold for amplification of the polaron mode are observed. Beyond a certain range of parameters we obtain anomalous behaviour. Heavily doped medium is found to require a lower threshold field. An appropriate magnitude of the transverse magnetic field effectively enhances the growth rate (≈ 10^10 m^(-1)). Hence, the presence of an external magnetic field is favourable for the onset of modulational amplification of the polaron mode in the heavily doped regime.
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