On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step

Abstract

Listen

Translate article

We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n + -n-structures whose n + -layer was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was measured in the 125-375 K temperature range with the transmission line method, with allowance made for conduction in both the n + -layer and n + -n doping step.