Abstract
We report on the tunneling magnetoresistance (TMR) effect in fully perpendicular magnetic tunnel junctions (p-MTJs) with the core structure of L10-MnAl/MgO/Co2MnSi/MnAl. The multilayer is epitaxially grown on GaAs (0 0 1) substrate by molecular-beam epitaxy (MBE), and both the top and bottom MnAl layers show well perpendicular magnetic anisotropy (PMA). Meanwhile, an inverse TMR effect with the MR ratio of 10% is observed at 5 K, which is attributed to the intrinsic negative spin polarization of MnAl in contrast to the positive one in Co2MnSi. This work proposes a MnAl-based fully p-MTJ for future STT-MRAM applications.
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