Abstract
Persistent photoconductivity due to the DX center in GaAs under a hydrostatic pressure of about 30 kbar has been observed for the first time. The characteristic temperature-dependent photoconductivity observed in GaAs under pressure is quite similar to that in AlGaAs alloy system. This indicates that the DX center in GaAs under hydrostatic pressure has also a large lattice relaxation owing to the AlGaAs-like conduction band structure.
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