Abstract
The metastable nature of DX centers in GaAs and related alloys is shown with particular emphasis on the role of the conduction band structure and the large DX-center lattice relaxation, based on DLTS and persistent photoconductivity measurements under hydrostatic pressure. The observation of similar deep centers in GaInP and AlGaSb under hydrostatic pressure is also described. The chemical trends of DX centers in GaAs under pressure suggest the importance of further study of the microscopic relaxation around the center.
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