Observation of the localized Si dangling-bond Pb defect at the Si/Si3N4 interface.

Abstract

Low-temperature electron-spin resonance (ESR) reveals the presence of the ${P}_{b}$ defect (identified with Si\ensuremath{\equiv}${\mathrm{Si}}_{3}$) at the thermally grown (111)Si/${\mathrm{Si}}_{3}$${\mathrm{N}}_{4}$ interface. This constitutes the first observation of this defect (called ${P}_{\mathrm{bN}}$) at a natural Si/solid interface other than the Si/Si${\mathrm{O}}_{2}$ one. It is argued that ESR analysis of the ${P}_{\mathrm{bN}}$ center is a powerful tool for characterizing the Si/${\mathrm{Si}}_{3}$${\mathrm{N}}_{4}$ interface on an atomic scale. This observation again confirms ${P}_{b}$ as a prototype dangling-bond center, its main properties being determined by the backside Si matrix.