Abstract
The resistivity of the anisotropic semiconductor p-CdSb is investigated in a wide temperature range ofT = 1.9–300 K in pulsed magneticfields up to B = 25 T. Two not intentionally doped single-crystalline samples oriented along the crystallographicaxes [100] (no. 1) and [010] (no. 2) are used for measurements of the resistivity,ρ, in transversal magnetic field configuration. Below the resistivity follows the laws for B<Bc and for B>Bc, wherethe coefficients C and S do notdepend on T, and . These are characteristics of nearest-neighbour hopping conductivity. The coefficientsC andS depend on thedirection of B, and their ratios agree completely with the values calculated with the components of thehole effective mass. The acceptor concentrations, and for no. 1 and no. 2, respectively, are relatively close to the critical value of the metal–insulatortransition (MIT), . This leads to enhancement of the mean localization radii, in no. 1 and in no. 2, with respect to the value of far from the MIT determined by an asymptote of the wavefunction at a large distancefrom the impurity centre.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
