Abstract
The conductivity and Hall effect of heavily doped p-Hg0.78Cd0.22Te:Cu crystals were studied in the temperature range of 4.2–125 K. The conductivity over the impurity band is of a metallic type for the acceptor concentration NA>3.8×1017 cm−3. The conductivity and the Hall coefficient governed by the delocalized charge carriers in the impurity band are independent of temperature. The sign of the Hall effect is positive in the metallic conductivity range. Near the metal-insulator transition point, the Hall mobility increases linearly with the acceptor concentration and is independent of the acceptor concentration at NA>1.6×1018 cm−3. The metallic conductivity is proportional to NA in the concentration range under study at NA 1.4×1017 cm−3). For NA<1.4×1017 cm−3, the hopping conductivity is observed.
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