Abstract
Resistivity and the Hall effect were studied in copper-doped p-Hg 0.8 Cd 0.2 Te crystals in the temperature range of 4.2–125 K and the range of Cu concentrations from 2.6×1015 to 2×1018 cm−3. It is shown that the conventional method for determining the ionization energy of impurities from the slope of the dependence R H (T) is inapplicable in this case. In order to obtain the correct results, it is necessary to take into account the structure of the impurity band and the screening of the impurity charge with free charge carriers. A simplified model of the impurity band is suggested; this model makes it possible to calculate the ionization energy of acceptors under conditions of light doping and a small degree of compensation. This approach is used to find that ionization energy of copper depends only slightly on the copper concentration at T=0 and is equal to E A =7.6 meV for an isolated acceptor, which coincides with the theoretical value. At finite temperatures, the ionization energy of acceptors decreases appreciably as a result of screening.
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