Abstract
In this work the dependence of electrical properties on operation temperature (27°C to 200°C) of Au-Cr/Bi0.7Dy0.3FeO3 (BDFO)/ZnO/p-Si (MIS device) are discussed. The thin film of BDFO was deposited by pulsed laser deposition (PLD) on p-Si. From the electrical characterization, the devices properties like ideality factor (η), barrier height) (BH) of Au-Cr/BDFO/ZnO/p-Si MIS were determined. The values of η and BH were found to be 1.34 and 0.86eV at 200°C and 2.16 and 0.30eV; respectively, at room temperature (27°C). The leakage current conduction mechanism of the device was investigated and found to be Schottky emission (SE) in the low electric field (<0.92MVcm−1) regime and trap assisted Poole–Frenkel (PF) mechanism for high electric field regime. The coexistence of ferroelectric and ferromagnetic coupling and excellent dielectric properties in multiferroic BDFO offers potential in the field of memory devices; sensing and energy harvesting (cantilevers).
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