Observation of Multiple Peaks in Field-Emission Energy Distributions from Silicon

Abstract

Field-emission energy distributions are presented for $n$-type Si (0.001 \ensuremath{\Omega} cm), with both field-desorbed and flash-recrystallized surfaces, indicating that emission occurs primarily from surface states \ensuremath{\sim}0.4 eV below the Fermi level, ${E}_{\mathrm{F}}$, and lower. At reduced temperature and high field, emission begins to appear at higher energy up to ${E}_{\mathrm{F}}$. Further, for smooth, recrystallized surfaces, multiple peaks are observed in the energy distributions, of 0.1- to 0.2-eV separation.