Abstract
Strong electron quantum interference effects have been observed at room temperature in the current-voltage characteristics of a double-barrier, wide-well, lattice-matched In0.52Al0.48As /In0.53Ga0.47As heterostructure tunneling device. A total of 22 oscillations was observed in the differential conductance. A model is proposed which attributes ten of the oscillations to the usual resonant tunneling via the subbands and the rest to the presence of virtual states that exist in the well and second barrier regions.
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