Abstract
Very recently, the borophene line defects assembled with υ1/6 and υ1/5 rows were experimentally observed. As the lightest 2D metal sheet, borophene may realize applications in transparent electronic interconnects and electrodes. It is very important and timely to reveal the effects of line defects on quantum transport, which is directly related to borophene-based applications. By using the nonequilibrium Green’s functions and the density-functional theory, here we investigate the charge transport of borophene line defects observed by ultrahigh vacuum scanning tunnelling microscopy in the experiment. It is shown that the presence of υ1/6–υ1/5 boundary weakens the π transmission but almost completely blocks the σ transmission. Furthermore, line defects are found to give rise to quasibound states that strongly hinder propagating electrons in a wide energy region, which is confirmed to originate from strong backscattering and quantum interference effects. This result indicates that borophene with line defects has profound potential for developing novel types of switching devices.
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