Abstract
Spin-dependent transport in high quality fully epitaxial magnetic tunneling junctions with structure of ultrathin-Fe(001)/MgO(001)/Fe(001) on a crystalline Cr(001) buffer which is employed as a spin-reflection layer has been investigated. We successfully observed an oscillation of conductance with respect to the Fe-wedge thickness with about a 2 monatomic-layer period. Also, we observed clear quantum interference effect both in tunneling spectra and differential tunneling magnetoresistance curves of the samples even at room temperature. The tunneling magnetoresistance is clearly modulated at the bias voltages corresponding to the resonant peaks. Spin-torque diode spectra of the junctions with ultrathin-Fe electrodes were also measured under various bias voltages. From these results, we proved that the spin-dependent transport in the magnetic tunnel junctions can be modulated by introducing quantum well states in the structure.
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