Abstract
In this paper we present experimental results that indicate the possibility of observing individual interface traps energetically located near the conduction band edge. By employing sub-μm MOSFETs operating at 4.2 K we were able to achieve a sufficient spatial and energetic resolution to make the change in charge state of an interface trap visible by studying the gate and drain voltage dependence of the drain current I d and the transconductance g m in the weak-inversion regime. The drain current exhibits a step like structure in its dependence on the gate voltage and hence one finds sharp peaks in the transconductance.
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