Abstract
Buried oxide layers formed by implantation in silicon were observed by microprobe RBS with 1.5 MeV He +. A cross-sectional image of a local oxide layer was obtained by imaging the decrease in silicon signals. Uniformly implanted samples annealed at 1260 and 1300°C were observed by RBS-mapping images. A nonuniform region, indicating the absence of surface silicon, was found in the mapping images for annealing at 1260°C, while the buried and surface layers for annealing at 1300°C were found to be uniform.
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