Recent developments in ion implantation in silicon

Abstract

The influence of high dose implantations in silicon on defects is discussed by means of two examples. The first is an investigation of the leakage currents cause by defects in very shallow p-n junctions, obtained by low energy boron implantation into pre-amorphized n-type material. Preamorphization is used to prevent channelling effects in order to be able to make very shallow junctions. Interstitial defects are shown to play an important role. The second example is a discussion of the defects occurring during very high dose implantation used for ion beam synthesis of buried oxide layers in silicon. The physical picture of this process is still rather unclear, but it is believed that again interstitial defects play an important role.