The origin of the energy-dose window in separation-by-implanted-oxygen materials processing

Abstract

The energy-dose (ED) window (so called Izumi window) for the formation of a perfect planar and homogeneous buried oxide layer in silicon using ion implantation is controlled by the interaction of excess radiation defects and the local oxygen concentration. The ED window is defined by an appropriate correlation between the distribution of implantation-induced excess defects and the position of the finally formed oxide layer. A quantitative relation is established on the basis of collisional computer simulations. The findings are discussed in terms of oxide precipitation under the influence of defects.