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Abstract
Single-electron resonant tunnelling (RT) assisted by a few ionised donors is studied for a laterally confined resonant tunnelling diode. The 3D multimode scattering matrix (S-matrix) theory is adopted, introducing the discrete scattering potential of background donors in the active device region. With a few ionised donors placed in the device region, the calculated transmission rate clearly shows new resonances which are dependent on the donor configuration. Visualisation of the electron probability density reveals that these resonances originate in RT via single-donor-induced localised states. This new type of RT leads to I-V characteristics with current steps of the order of 0.1 nA per donor before the main current peak, which are in good agreement with experimental results. In addition, the donor-position dependence of the current plateaux and the donor-induced asymmetry of the fine structures are demonstrated.
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