Abstract
This work presents the performance evaluation of Transparent Gate Thin-Film Transistor (TG-TFT) with the relative analysis of numerous materials such as Aluminum (Al), Gold (Au), Indium Tin Oxide (ITO), Zinc Oxide (ZnO), and Titanium Nitride (TiN). This work also aims to find the best suitable gate material on the TFT for high-performance applications through a solid thin film. It is observed from the outcomes that TG-TFT performance improves significantly with TiN gate in terms of mobility (∼4 times), switching ratio (ION/IOFF) by 46.42 %, and electric field by ∼ 29 % as compared to conventional gate material (Au). Further, surface potential and energy band profile have been shown. Therefore, the examination shows the perspective of TiN as gate materials that can be reused for requests in nanoelectronics tools and designing of IC boards owing to the better conductivity, robustness, and cheap nature of TiN along with proven results it can be used as a gate material.
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