Abstract
This work examines the comparative study of various materials, i.e., Metal, Indium Tin Oxide (ITO), Black Phosphorous (BP), Zinc Oxide (ZnO) and Titanium Nitride (TiN) as a gate material in Recessed Channel (RC) MOSFET with an aim to examine the most desired gate material for sub-20nm MOS device. It is perceived from the results that the characteristics of RC MOSFET improves significantly in terms of transconductance (g m ) (two times), switching ratio (I on /I off ) (102 to 108), subthreshold slope (SS) (47.69%), electron mobility (45.4%) and electric field (71.4%) when Black Phosphorus is amalgamated on to the RC MOSFET when compared to Al, ITO, ZnO and TiN gated RC MOSFET. Thus, this analysis demonstrates the potential of black phosphorus as a gate material which can further be used for the applications in Nanoelectronic devices and IC design.
Published Version
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