Abstract
A numerical simulation of photocurrent transient was proposed to estimate properties of passive films and anodic films formed on pure Ti. To simulate photocurrent transient, partial differential equations describing the change in the concentration and positions of photoexcited charge carriers with time were developed based on the generation, recombination, and transports of the carriers. Simulations were performed by screening several parameters. The electron mobility, donor density, recombination coefficient and interfacial reaction rate coefficient were estimated by fitting simulated photocurrent transients to experimentally obtained transients.
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