Numerical simulation of PbS quantum dot solar cell and optimisation of absorber layer

Abstract

A Quantum dot Solar Cell (QDSC) can be defined as a photovoltaic cell which utilises quantum dot as the captivating photovoltaic device. It is used as a substitute to the bulk material for example silicon or copper indium gallium selenide. Researchers have proven that nanotechnology may considerably increase the amount of electricity generated by solar cells. On altering the size of the quantum dots, a wide variety of energy levels can be observed with different bandgaps. Further, in CQD devices, the electron transport layer-ETL and hole transport layer-HTL plays a vital role in enhancing the performance. Maximum power conversion efficiency is achieved in this work by treating the HTL (PbS-EDT) with the absorber layer (PbS-TBAI) and ETL(TiO2). In the initial simulation, efficiency obtained is 9.88%. After altering the thickness of the absorber layer from 200 to 600 nm, the optimum result is obtained at 600 nm. Acceptor doping (NA) of HTL layer and Donor doping (ND) of ETL layer is optimised at 1x1019 cm−3 where Interface Defect Density (IDD) is kept constant at 1x1013 cm -2. The maximum power conversion efficiency (PCE) achieved is 22.35% using 1D SCAPS Simulator.