Abstract
The steady state photoconductivity as a function of temperature and light intensity was measured on plasma-deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) thin films possessing different microstructure and morphology. Different phototransport behaviors were observed in films having dissimilar microstructural attributes and we have shown this to be linked to different features of the density of states (DOS) in the gap. The phototransport properties of μc-Si:H films having small grains, high density of inter-grain and inter-columnar boundary regions containing disordered phase show light intensity exponent ( γ) variation between 0.5 and 1, and thermal quenching effect in temperature-dependent photoconductivity. Based on our mutually corroborative simulation and experimental results, we have proposed the effective DOS maps for the μc-Si:H system, which differ for films having different microstructures.
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