Abstract
The steady state and transient photoconductivity of various sputtered samples of hyrogenated amorphous silicon were measured as a function of the temperature (100–450 K) and the photon flux. All the samples exhibit an almost bimolecular regime, with the same well-defined activation energies for both the steady state photoconductivity and the response time in the transient regime. Therefore several electron-trapping centres exist which are identified by means of a model as quasi-discrete levels about 0.2, 0.36 and 0.66 eV below E c.
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