Abstract
The density of states(DOS), between the dark Fermi level Ef and the conduction band mobility edge Ec, was deduced from the temperature dependence of the steady state photoconductivity(SSPC). The degradation of SSPC and the decrease of the activation energy Ep of SSPC after light soaking are interpreted as results of increase of deep states and decrease of shallow states about 0.3eV below Ec. This DOS change is similar to that obtained from the temperature dependence of the photoconductivity(PC) response time.
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