Numerical modeling of a hydrogenated silicon inductively coupled plasma discharge (SiH4/H2/Ar)

Abstract

In favor of the global manufacturing industry, recent developments in plasma processing technology are of great importance, especially in semiconductor manufacturing processes. Mainly when plasma discharge studies are required. In our work, we have studied the properties of 2D numerical modeling of the deposition of thin films based on silicon diluted with argon and hydrogen SiH4/H2/Ar in an inductively coupled plasma (ICP) reactor operating at low pressure within a range of 0.5 to 1 Torr and a low temperature of about 500 K; in addition to, a qualitative study of the highest influencing parameters on the deposit. The plasma discharge in this reactor is fed by a radio frequency source; whose working frequency is of the order of 13.56 MHz, is modeled by a fluid approach that describes the plasma in terms of macroscopic quantity; assuming a specific form of the distribution function and taking the velocity moments of the Boltzmann equation coupled with the maxwell equations. This results in a set of coupled partial differential equations that can be solved using the finite element method until a steady state is obtained. The results obtained show the evolution of the fundamental characteristics of the plasma discharge in an ICP reactor, giving a compromise between a high electron density and a low temperature at the surface which improves the deposition of thin-film silicon, to achieve a more efficient and less financially demanding deposition while preserving the surface from deterioration.