Numerical modeling based on the analytical solution of the steady-state small signal photocarrier grating equations and analysis of field-dependent measurements for noncrystalline Si: H samples

Abstract

The available experimental data of field-dependent steady-state photocarrier grating (SSPG) are numerically modeled employing the derived formula of [Formula: see text] (where [Formula: see text] represents the ratio of coherent to incoherent currents in SSPG technique) obtained from the analytical solution of the small signal steady-state grating problem by applying Galerkin’s method. This numerical analysis shows the extent of validity and success of using the derived formula of [Formula: see text] [R. I. Badran, Results Phys. 17, 103079 (2020)] in reproducing the field-dependent data for noncrystalline Si: H samples. The best quality of fittings is reproduced when [Formula: see text] value is minimum. This analysis provides us with approximate and corrected values for each of transport quantities, namely, the small-signal response lifetime, electron and hole mobilities that are found in agreement with the values obtained from the applications of other methods. For two polymorphous (pm) Si: H samples, the average estimated, corrected values for the carrier density and mobility-lifetime product, namely, [Formula: see text][Formula: see text]cm[Formula: see text] and [Formula: see text][Formula: see text]cm[Formula: see text] and ([Formula: see text][Formula: see text]cm2V[Formula: see text] and [Formula: see text][Formula: see text]cm2V[Formula: see text], respectively, are obtained. The analysis is also extended to analyze the field-dependent data for nanocrystalline (nc) Si: H samples at low temperatures. The extracted values of [Formula: see text] and ([Formula: see text] are [Formula: see text][Formula: see text]cm[Formula: see text] and [Formula: see text][Formula: see text]cm2V[Formula: see text].