Numerical analysis on the LDMOS with a double epi-layer and trench electrodes

Abstract

We proposed a new lateral double-diffused MOS (LDMOS) structure employing a double p/n epitaxial layer, which is formed on p − substrates. Trenched gate and drain are also employed to obtain uniform and high drift current density. The breakdown voltage and the specific on-resistance of the proposed LDMOS are numerically calculated by using a two-dimensional (2D) device simulator, Medici. The n − drift region and upper p − region of the proposed LDMOS are fully depleted in off-states employing the RESURF technique. The simulation results show that the breakdown voltage is 142 V and specific on-resistance is 183 mΩ mm 2 when the cell pitch of the LDMOS is 7.5 μm. The proposed LDMOS shows better trade-off characteristics than the previous results.