Abstract
The growth rate of epitaxial film by MOCVD is determined by the transport of group-III elements. However, group-V elements influence the electronic properties. It is often said about undoped GaAs that an increase of supplied arsine causes a p/n conductivity type conversion. A numerical model which considers the diffusion and decomposition of arsine is proposed. Using this model, the concentration of arsenic at a growing surface can be obtained as a function of the substrate temperature and the laminar fluid film thickness. Considering the properties of phosphine, the surface concentration of phosphorus can also be obtained. The phosphorus distribution coefficient of GaAsxP1-x can be well described by using the estimated concentrations of arsenic and phosphorus with a simplified equilibrium of the surface reaction.
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