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Abstract
The effect of H3AsO4 concentration in ethylene glycol on the electrical properties of p-n junctions in silicon has been studied. The results can be used to select the orthoarsenic acid concentration for producing arsenic diffusion layers with a predetermined junction depth, sheet resistance, and arsenic concentration. The maximum value of N s As, 4.1 × 1019 cm−3, is lower than the surface phosphorus concentration, N s P ∼ 2 × 1020 cm−3, which is tentatively attributed to the significant arsenic vaporization from anodic oxide films and also to the fact that the arsenic concentration in doped anodic oxide films is lower than the phosphorus concentration because, in the case of phosphate electrolytes, the sorption capacity of a monolayer is a factor of 2.7 higher.
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