Abstract
ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.
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