Abstract
Experiments are described in which lead was deposited, by evaporation in vacuum, on to SiO-covered glass substrates along which a temperature gradient was maintained. Below the bulk melting point of lead (320 °C) at a substrate temperature of 189 ± 2 °C a transition was observed in the structure of the films. This transition corresponded to the one observed by Palatnik and Komnik at a temperature designated by them as T d. It was found that for any thickness of discontinuous lead film T d was constant, but that it showed a rapid change to about 245 °C at a critical pressure of oxygen in the vacuum chamber. This critical pressure could be varied by altering the lead deposition rate. An explanation for the transition is given in terms of surface melting of small islands, and the effect of oxygen interpreted in terms of its changing the effective surface energy of the particles.
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