Abstract
We investigated the nucleation and grain growth of graphene grown on Cu through radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at different temperatures. A reasonable shielding method for the placement of copper was employed to achieve graphene by RF-PECVD. The nucleation and growth of graphene grains during PECVD were strongly temperature dependent. A high growth temperature facilitated the growth of polycrystalline graphene grains with a large size (~ 2 μm), whereas low temperature induced the formation of nanocrystalline grains. At a moderate temperature (790 to 850 °C), both nanocrystalline and micron-scale polycrystalline graphene grew simultaneously on Cu within 60 s with 50 W RF plasma power. As the growth time increased, the large graphene grains preferentially nucleated and grew rapidly, followed by the nucleation and growth of nanograins. There was competition between the growth of the two grain sizes. In addition, a model of graphene nucleation and grain growth during PECVD at different temperatures was established.
Highlights
We investigated the nucleation and grain growth of graphene grown on Cu through radio frequency plasma-enhanced chemical vapor deposition (RF-plasma-enhanced CVD (PECVD)) at different temperatures
The finite element analysis and simulation results show that under the condition of low-pressure CVD (LPCVD), the gas velocity in the confined space was very low and the diffusion flow was dominant, so the transport of reactants to the substrate surface was greatly reduced, which was conducive to the growth of graphene in the PECVD process
We surveyed the nucleation and grain growth of graphene grown on Cu during RF-PECVD
Summary
We investigated the nucleation and grain growth of graphene grown on Cu through radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at different temperatures. The finite element analysis and simulation results show that under the condition of low-pressure CVD (LPCVD), the gas velocity in the confined space was very low and the diffusion flow was dominant, so the transport of reactants to the substrate surface was greatly reduced, which was conducive to the growth of graphene in the PECVD process.
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