Abstract
We have synthesized a very thin graphite film on polycrystalline Ni foil using radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at relatively low temperature. Structural analysis through electron diffraction and Raman spectroscopy demonstrated that the PECVD grown graphite film consists of large grains sized over tens of microns and is highly ordered structure exhibiting Bernal stacking despite of low synthetic temperature of 850oC. Accordingly, the high carrier mobility of 4,500 cm2/Vsec was obtained at room temperature from a monolayer of PECVD grown graphene, which is higher than any reported value of CVD-grown graphene.
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