Abstract
We report on the results of Hall effect and photoluminescence (PL) in n-type Zn3P2 grown by molecular beam epitaxy. The Zn3P2 thin films indicated n-type conductivity instead of the usual p-type conductivity due to a strong self-compensation effect with Hall mobility and carrier concentration of 3–7×103 cm2/Vs and 3–9×1010 cm−3 at room temperature, respectively. Donor levels of 0.01 and 0.73 eV from the conduction band were identified by resistivity and Hall effect measurements. The PL spectra show donor-acceptor pair emission near 1.41 eV at 20 K ascribed to an acceptor level of 0.26 eV from the valence band.
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