Abstract
Lattice matched ZnCdSeTe/(ZnMgSeTe quasi-quaternary) pn-junction green light emitting diodes (LED) grown on (001) ZnTe substrates were studied. The ZnMgSeTe quasi-quaternary layers, which consisted of stacked layers of very thin ZnSe and ZnMgTe layers, were introduced in order to obtain high carrier concentrations in the n-type layers. Two layer designs near the ZnCdSeTe active layers in the LEDs were compared to optimize the emission properties. Electrical properties from two LED structures showed no difference. On the other hand, total emission intensity from the modified LED structure was drastically improved by a factor over 30 under same operation conditions. Momentums of the electron and heavy hole wavefunctions inside the two LED structures were simulated to understand an experimentally observed difference of the emission properties. Results of the simulations showed that the modified LED structure has more efficient confinements of electrons and holes inside the ZnCdSeTe active layers by introducing thicker ZnSe and ZnMgTe layers neighboring the ZnCdSeTe active layer. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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