Abstract
In this paper, a novel tri-independent-gate (TIG) FinFET is presented for multi-current modes control for the first time. The entire integration flow of proposed TIG FinFET is fully compatible with the mainstream gate-first HKMG FinFET process. Five kinds of ON state modes and threshold voltages can be offered by TIG FinFET without additional voltage sources, and it is demonstrated to have a great potential in dynamic voltage SRAM design. The critical electrical parameters of TIG FinFET in different modes are fully investigated with TCAD simulation and compared to the traditional FinFET. TIG FinFET with double fins is found to possess a distinct different output and capacitance characteristics with single fin FinFET. The underlying physical mechanisms are analyzed and investigated in detail.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
