Abstract
Nanoimprint lithography (NIL) is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS) in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL). We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc) for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.
Highlights
Nanoimprint lithography (NIL) process is easy to make the magnetic nanowire comparison with Electron Beam (EB) lithography.[1,2,3] EB lithography process needs expensive lithography systems and complex process
We demonstrate magnetization switching with new fabrication process of magnetic nanowire by way of NIL with the pulse injection along the wire with substrate(SiO2 or Plastic)/Al2O3 (10 nm)/Co-Tb (6 nm)/Pt (2 nm) wire
It indicates that magnetic properties of the wire on thermal oxide Si substrate and plastic substrate are almost same
Summary
Nanoimprint lithography (NIL) process is easy to make the magnetic nanowire comparison with Electron Beam (EB) lithography.[1,2,3] EB lithography process needs expensive lithography systems and complex process. NIL is new method which is required only few processes and cheap stamper. A continuous growing interest in SOTs driven magnetization dynamics with out-of-plane magnetized films.[12,13,14] The origin of SOTs is based on heavy metal and inversion asymmetry structure.[15,16] In addition to that the pulse current injection in this structure, spin current is generated into the nanowire from the heavy metal layer.[15,16]. We demonstrate magnetization switching with new fabrication process of magnetic nanowire by way of NIL with the pulse injection along the wire with substrate(SiO2 or Plastic)/Al2O3 (10 nm)/Co-Tb (6 nm)/Pt (2 nm) wire
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