Abstract
Low-temperature poly-Si lateral double-diffused metal oxide semiconductor (LTPS LDMOS) with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400°C substrate heating for the first time. The ON/OFF current ratios were and while operating at and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V and V. The with dimensions of μm/12 μm could be significantly decreased times in magnitude as compared with conventional offset drain thin-film-transistors. © 2004 The Electrochemical Society. All rights reserved.
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