Abstract
ABSTRACTA novel body depletion termination (BDT) Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with low specific on-resistance (Ron,sp) is proposed in this paper. One of the features of the device is that a BDT is inserted into the trench oxide layer (TOL) in the drift region where there is a heavily doped N pillar parallel to the trench TOL, which can realise the drift region depletion of the new device independently of the conventional device at the high doping concentration of the drift region (Nd). Finally, the bulk electric field is optimised to increase the breakdown voltage (BV) and Nd is increased to reduce the Ron,sp. Compared with the Con LDMOS, the BV of 1060 V is increased by 45.2% and the Ron,sp of 76.96 mΩ·cm2 is decreased by 68.2% for the BDT LDMOS. And the figure of merit (FOM= BV2/Ron,sp) of the BDT LDMOS is 14.6 MW·cm−2.
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