Novel features in the strain profile and gate oxide capacitance of through-gate-oxide implanted structures

Abstract

Oxidized silicon samples were implanted with O, Si, or Ar ions. The samples were characterized by x-ray triple crystal diffractometry and metal-oxide-semiconductor admittance spectroscopy to reveal information on the nature of the ion-induced damage. The experimental results on the strain profile, gate oxide capacitance, etc., exhibited novel features. These interesting results suggest ion-damage-induced precipitation of SiO2 particles in silicon and oxidation of the silicon subsurface by the injection of the recoil O atoms from the gate oxide into the silicon subsurface, both at room temperature.