Abstract
Failure Analysis (FA) on Fully Depleted Silicon on Insulator (FDSOI) device is challenging due to its unique structure with buried oxide layer. Typical failure analyses for the bulk device are not viable to isolate the fault location as the first step for the defect finding any more in such a FDSOI environment. Based on the in-depth study on structural limitation of the FDSOI device, this paper firstly reports novel approaches for the physical and electrical FA methodologies with the success stories for yield learning. Furthermore, we demonstrate the improvements of FA methods compared to the conventional ones and how new ideas are applied to the analysis procedure including the minute soft defect FA.
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