Abstract

In this paper, 28 nm Bulk MOSFET and Fully Depleted Silicon On Insulator (FDSOI) MOSFET are designed. FDSOI is three layered device as it has Buried Oxide layer (BOX)between channel and substrate. The computer simulations of the Bulk MOSFET and FDSOI MOSFET device designs are performed on COGENDA Visual TCAD tool. The comparison of both the devices has been done on the basis of threshold voltage, current in ON state, current in OFF state, Current ratio (ON/OFF), Transconductance (g m ), Figure of Merit (FOM), Electrostatic Integrity (EI)and Drain Induced Barrier Lowering (DIBL). It is observed that FDSOI MOSFET has better current ratio (ON/OFF)as compared to Bulk MOSFET.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.