Abstract
In this paper, 28 nm Bulk MOSFET and Fully Depleted Silicon On Insulator (FDSOI) MOSFET are designed. FDSOI is three layered device as it has Buried Oxide layer (BOX)between channel and substrate. The computer simulations of the Bulk MOSFET and FDSOI MOSFET device designs are performed on COGENDA Visual TCAD tool. The comparison of both the devices has been done on the basis of threshold voltage, current in ON state, current in OFF state, Current ratio (ON/OFF), Transconductance (g m ), Figure of Merit (FOM), Electrostatic Integrity (EI)and Drain Induced Barrier Lowering (DIBL). It is observed that FDSOI MOSFET has better current ratio (ON/OFF)as compared to Bulk MOSFET.
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