Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET

Abstract

In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET to enhance the device reliability. Dual Metal Dielectric Engineered Gate All Around (DMDEGAA) MOSFET has been compared with both cylindrical Dual Metal Gate All Around (DMGAA) MOSFET and cylindrical Gate All Around (GAA) MOSFET. DMDEGAA MOSFET has larger tunneling distance than other two devices which further reduces Band To Band Tunneling (BTBT). It reduces GIDL current over other devices directing immunity from the leakages along with higher Ion/Ioff ratio showing larger applicability for digital applications. DMDEGAA MOSFET shows Subthreshold Slope (SS) close to 60 mV/decade and has higher transconductance (gm), higher Transconductance Generation Factor (TGF), higher early voltage (VEA), lower channel resistance (Rch), higher Current Gain (CG) and higher Maximum Transducer Power Gain (MTPG) for improved analog performance. DMDEGAA MOSFET also poses higher Cut Off Frequency (fT), higher Frequency Transconductance Product (FTP) and lower Total Gate Capacitance (Cgg) showing its efficacy for high speed and high frequency applications.