Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance

Abstract

In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimizing the tunneling from Valence Band to Conduction Band so bringing down the gate induced drain leakages. DMISEGAA MOSFET has been compared with cylindrical Dual Metal Gate All Around (DMGAA) MOSFET and cylindrical Gate All Around (GAA) MOSFET. DMISEGAA MOSFET exhibits higher drain currents, higher transconductance and higher output conductance. It also poses Subthreshold Slope (SS) in proximity with the ideal value and an enhanced on state to off state current ratio (I on /I off ratio). Higher frequency operation of DMISEGAA MOSFET over DMGAA MOSFET and GAA MOSFET has been directed by higher cutoff frequency (fT) of DMISEGAA MOSFET.