Abstract
Morphological analysis of epitaxially grown self-assembled InAs quantum dots grown on GaAs (311)A substrate shows a markedly anisotropic and faceted shape. The islands, triangular pyramids with an elongated axis, are preferentially aligned along the [2̄33] direction. Photoluminescence emission at 10 K is 20% polarised along the same direction. Luminescence linewidth is reduced with increasing temperature from 85 meV (at 10 K) up to 52 meV (at 100 K) with only minor reduction of the emission intensity.
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