Abstract
High energy ion implantation with a Van-de-Graaff accelerator has been successfully applied to fabricate integrated bipolar devices. High energy As <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and B <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions are implanted in p type substrate through thin oxide and LOCOS field oxide layers to form buried n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layer and channel stopping p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layer. Base and emitter are also formed by conventional implantation. The isolation leakage current was less than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> A at 50 V. The current gain of the fabricated transister was 70. A collector-base breakdown voltage was 9V in the present As <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> implantation condition. 0.35 ns/gate propagation delay time and 0.4 mW/gate dissipation power were obtained in a 21-stage Non Threshold Logic (NTL) ring oscillator.
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