Novel approach to CuInSe2-based thin-film photovoltaic cells

Abstract

A new n-CuInSe2-based cell has been constructed with a concerted effort at the synthesis of n-CuInSe2 thin-film absorber and the electrochemical conversion of the CuInSe2 surface to a semi-insulating, lattice-matched CuInxSeyIz transition layer and a semiconducting p-CuISe3 window. The CuISe3 layer can be anodically formed on n-type or p-type CuInSe2; it forms a rectifying p-n junction with n-CuInSe2 and an ohmic contact with p-CuInSe2. This cell obviates some of the prevailing concerns with the p-CuInSe2/n-CdS cell while retaining the thin-film attributes of the radiation-tolerant CuInSe2.